VQ2001J Datasheet, Mos Transistors, Siliconix

P-channel enhancement-mode mos transistors

VQ2001J

Siliconix

68.61 KB

P-channel enhancement-mode mos transistors.
.

D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold:
3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF Benefits D Ease in Driving Swi

D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Syste

📁 Related Datasheet

VQ2001 - P-Channel Enhancement-Mode MOS Transistor (Siliconix)

VQ2001J - P-Channel Enhancement-Mode MOSFET Transistors (Vishay Siliconix)

VQ2001P - P-Channel Enhancement-Mode MOS Transistors (Siliconix)

VQ2001P - P-Channel Enhancement-Mode MOSFET Transistors (Vishay Siliconix)

VQ2000 - P-Channel Enhancement-Mode MOS Transistor (Siliconix)

VQ2004 - P-Channel Enhancement-Mode MOS Transistor (Siliconix)

VQ2006 - P-Channel Enhancement-Mode MOS Transistor (Siliconix)

VQ1000 - N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array (Supertex)

TAGS

VQ2001J P-Channel Enhancement-Mode MOS Transistors Siliconix