* D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold:
* 3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF Benefits D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Switching D Easily Driven Without Buffer Applicat
VQ2001J
Siliconix
68.61 KB
P-channel enhancement-mode mos transistors.
VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number VP0300B VP0300L VP0300M VQ2001J VQ2001P V(BR)DSS M.
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