SSF6008
Description
: The SSF6008 is a new generation of high voltage and low current N- Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6008 is assembled in high reliability and qualified assembly house. Application:
- Power switching application SSF6008TOP View (T0-220)
Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR dv/dt TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Min.
- - Typ. 0.83
- Max.
- 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy ② Repetitive avalanche energy① Peak diode recovery voltage Operating Junction and Storage Temperature Range Max. 84 76 310 150 1.5 ±20 400 20 30
- 55 to +150 W W/ ْC V m J m J v/ns ْC A Units
Electrical Characteristics @TJ=25 ْC(unless...
