SSF6010
Description
: The SSF6010 is a new generation of middle voltage and high current N- Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6010 is assembled in high reliability and qualified assembly house. Application:
- Power switching application SSF6010 TOP View (TO220)
Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR TJ TSTG Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Parameter BVDSS VGS(th) gfs IDSS Drain-to-Source breakdown voltage Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 60
- 2.0
- -
- - 58
- -
- - Min.
- - Typ.
- 9 Typ. 1.25
- Max. Units
- 10 4.0
- 2 10 100 -100 μA VGS=20V VGS=-20V V mΩ V S Max.
- 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V...
