SSF2610E MOSFET

Silikron Semiconductor

Description

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The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: SSF2610E
Manufacturer: SilikrON Semiconductor ↗
File Size: 320.23 KB
Datasheet: SSF2610E-SilikronSemiconductor.pdf
Description: MOSFET

Features

* VDS = 20V,ID = 8A RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating：2000V HBM
* High Power and current handing capability
* Lead free product is acquired

Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Sil

SSF2610E Distributors

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SSF2610E MOSFET Silikron Semiconductor

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