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SSF2610E Datasheet - Silikron Semiconductor

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SSF2610E MOSFET

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The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

SSF2610E-SilikronSemiconductor.pdf

Preview of SSF2610E PDF

Datasheet Details

Part number:

SSF2610E

Manufacturer:

SilikrON Semiconductor ↗

File Size:

320.23 KB

Description:

MOSFET

Features

* VDS = 20V,ID = 8A RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating:2000V HBM
* High Power and current handing capability
* Lead free product is acquired

Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Sil

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