SSF6007
SilikrON Semiconductor ↗
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Mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance. These features combine
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SSF6005 - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
60V
RDS(on) 2.7mohm(typ.)
ID 160A
Features and Benefits
TO-220
Advanced trench MOSFET process technology .
SSF6005 - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS
60V
RDS(on) ID
2.7mΩ(typ.) 160A
Features and Benefits:
TO-220
Advanced M.
SSF6007 - 50V P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
SSF6007
50V P-Channel MOSFET
D
VDSS
-50V
D
RDS(on) ID
2.1Ω (Typ) -130mA
Features and Benefits
§ Advanced MOSFET pr.
SSF6008 - MOSFET
(Silikron Semiconductor Co)
.. SSF6008
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and .
SSF6008 - N-Channel MOSFET
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SSF6008
60V N-Channel MOSFET
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SSF6010 ..
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and c.
SSF6010 - 60V N-Channel MOSFET
(GOOD-ARK)
SSF6010
60V N-Channel MOSFET
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SSF6010A - 60V N-Channel MOSFET
(GOOD-ARK)
SSF6010A
60V N-Channel MOSFET
FEATURES Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and.
SSF6010A - MOSFET
(Silikron Semiconductor)
SSF6010A
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current
Description.
SSF6010G - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
60V
RDS(on) 8.3mΩ (typ.)
ID 64A ①
Features and Benefits
TO-251
Advanced MOSFET process technology Special.