SSFT3906

MOSFET

Silikron Semiconductor

SSFT3906 Features

* TO220

* Advanced trench MOSFET process technology

* Special designed for PWM, load switching and general purpose applications

* Ultra low on-resistance with low gate charge

* Fast switching and reverse body recovery

* 175℃ operating temperature SSFT3906

SSFT3906 General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety o.

SSFT3906 Datasheet (410.74 KB)