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SSF3002EG1 MOSFET

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Description

Main Product Characteristics: VDSS 30V RDS(on) 1ohm(typ.) ID 0.5A① SOT23 .
It utilizes the latest trench processing techniquesto achieve the high cell density and reduces the on-resistance with high repetitiveavalanche ratin.

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Datasheet Specifications

Part number
SSF3002EG1
Manufacturer
Silikron
File Size
437.25 KB
Datasheet
SSF3002EG1-Silikron.pdf
Description
MOSFET

Features

* andBenefits:
* Advanced trench MOSFET process technology

Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature

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