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HUR3060PT - High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Features

  • International standard package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.

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Datasheet preview – HUR3060PT

Datasheet Details

Part number HUR3060PT
Manufacturer Sirectifier Semiconductors
File Size 287.44 KB
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Datasheet download datasheet HUR3060PT Datasheet
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Full PDF Text Transcription

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HUR3060PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H J K Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 www.DataSheet4U.com A=Anode, C=Cathode, TAB=Cathode HUR3060PT VRSM V 600 VRRM V 600 L M N Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=140oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=1A; L=180uH VA=1.5.VR typ.
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