SII100S12 Datasheet - Sirectifier Semiconductors

SII100S12 SPT IGBT Modules

SII100S12 SPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min o 145(105) 290(210) _ +20 _ 40+150(125) 4000 95(65) 290(210) 720 V C V Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(80)oC, tP =1ms IFRM IFSM tP =10ms; sin.;Tj=150 oC A A A SII100S12 SPT IGBT Modules Chara.

SII100S12_SirectifierSemiconductors.pdf