XD010-22S-D2F
Description
Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage and has internal temperature pensation of the bias voltage to ensure stable performance over the full temperature range. It is a drop-in, no-tune solution for medium power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. It is internally matched to 50 ohms.
1805-1880 MHz Class A/AB 12W Power Amplifier Module
Functional Block Diagram
Stage 1 Stage 2
Product Features
Temperature pensation
Temperature pensation
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50 W RF impedance 12W Output P1d B Single Supply Operation : Nominally 28V High Gain: 31 d B at 1840 MHz High Efficiency: 25% at 1840 MHz Advanced, Xe MOS II LDMOS FETS Temperature...
