GA5210PL
Siyang Microelectronics
354.67kb
Cmos process / toaster series control ic. Min Typ Max VCC Supply Voltage 3.3 4.3 5.1 VIH Input High Voltage 0.8VCC - - VIL Input Low Voltage 0 - 0.3VCC TA Operation
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GA5210PH - GA5210PH High-Pressure Process
(ETC)
GA5210PH (Ver 1.5)
GA5210PH ,; GA5210PH 。 , GA5210P、 GA5210PL, PT8A2511, A0201D, CMS12530。 ,( 4.5V 5V); GA5210PH (12V ,4.5V )(12V .
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(Siyom)
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GA5212 (Ver 1.3)
GA5212 CMOS ,; 4 ,TO94 SOT143 ,。 2.8V~5.0V; 、; ; RC ,, 。
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O I/O ,,; ,,。 。 /。 .
GA500TD60U - HALF-BRIDGE IGBT DUAL INT-A-PAK
(International Rectifier)
..
PD - 50048D
GA500TD60U
HALF-BRIDGE IGBT DUAL INT-A-PAK
Features
• Generation 4 IGBT technology • UltraFast: Optimized for high.
GA50JT06-258 - Junction Transistor
(GeneSiC)
GA50JT06-258
Normally – OFF Silicon Carbide Junction Transistor
Features
225°C maximum operating temperature Gate Oxide Free SiC Switch Excepti.
GA50JT06-CAL - OFF Silicon Carbide Junction Transistor
(GeneSiC)
.
GA50JT12-247 - Normally - OFF Silicon Carbide Junction Transistor
(GeneSiC)
Normally – OFF Silicon Carbide Junction Transistor
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GA50JT12-CAL - Junction Transistor
(GeneSiC)
Die Datasheet
GA50JT12-CAL
Normally – OFF Silicon Carbide Junction Transistor
Features
210 °C Maximum Operating Temperature Gate Oxide Free SiC .
GA50JT17-247 - Junction Transistor
(GeneSiC)
Normally – OFF Silicon Carbide Junction Transistor
Features
175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Ope.
GA50JT17-CAL - Junction Transistor
(GeneSiC)
Die Datasheet
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Normally – OFF Silicon Carbide Junction Transistor
Features
210 °C Maximum Operating Temperature Gate Oxide Free SiC .
GA50K6A1A - THERMISTORS
(TE)
SERIES I THERMISTORS
Thermally Conductive Epoxy Coating Ø 2.4 mm Maximum Diameter 32 AWG Alloy 180 Leads Four Temperature Tolerance Classifications Av.