SD11800 - 1200V Silicon Carbide Schottky Diode
1200V Silicon Carbide Diode (isolated back side) VALUE 1200V 1200V 1200V 1200V 10A 10A 44A 43A 33A 16W 19W 175°C 200°C -55°C to +175°C -55°C to +175°C 260°C TEST CONDITIONS TC = 25°C TC = 125°C TC = 125°C, tp = 10ms,
SD11800 Features
* VRRM 1200V IF @ 125°C 10A SMALL FOOTPRINT CERAMIC ISOLATED BACKSIDE BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWER DENSITY APPLICATIONS AEROSPACE HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C. Reverse Voltage Repetitive Peak Voltage Surge
