1T365 - Silicon Variable Capacitance Diode
1T365 Features
* Super miniature package
* Small capacitance 0.7 pF Typ. (VR=25 V)
* Low leakage current 10 nA Max. (VR=28 V)
* Small serial resistance 1.1 Ω Typ. (VR=1 V, f=470 MHz) Structure Silicon epitaxial planar type diode M-235 Absolute Maximum Ratings (Ta=25 °C)
* R
