CXK58512M Datasheet - Sony Corporation

CXK58512M 65536-word X 8-bit High Speed CMOS Static RAM

CXK58512M Features

* Fast access time (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.)

* Low standby current 10µA (Max.)

* Low data retention current 6µA (Max.)

* Single +5V supply: +5V ± 10%

* Low voltage data retention: 2.0V (Min.)

* Broad package l

Datasheet Details

CXK58512M

Sony Corporation

210.52 KB

65536-word x 8-bit high speed cmos static ram.

📁 Related Datasheet

CXK58512TM 65536-word X 8-bit High Speed CMOS Static RAM (Sony Corporation)

CXK581000AM 131072-word x 8-bit High Speed CMOS Static RAM (Sony Corporation)

CXK581000AP 131072-word x 8-bit High Speed CMOS Static RAM (Sony Corporation)

CXK581000ATM 131072-word x 8-bit High Speed CMOS Static RAM (Sony Corporation)

CXK581000AYM 131072-word x 8-bit High Speed CMOS Static RAM (Sony Corporation)

CXK581000M 131072-word x 8-bit HIGH SPEED COMS STATIC RAM (Sony Corporation)

CXK581000P 131072-word x 8-bit HIGH SPEED COMS STATIC RAM (Sony Corporation)

CXK5814P 2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM (Sony Corporation)

TAGS

CXK58512M Distributor