* Fast access time (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.)
* Low standby current 10µA (Max.)
* Low data retention current 6µA (Max.)
* Single +5V supply: +5V ± 10%
* Low voltage data retention: 2.0V (Min.)
* Broad package l
CXK58512M Datasheet (210.52 KB)
CXK58512M
Sony Corporation
210.52 KB
65536-word x 8-bit high speed cmos static ram.
CXK58512TM/M -55LL/70LL/10LL
∗
65536-word × 8-bit High Speed CMOS Static RAM
∗Under For the availability of this product, please contact the sales of.
📁 Related Datasheet
CXK58512TM 65536-word X 8-bit High Speed CMOS Static RAM (Sony Corporation)
CXK581000AM 131072-word x 8-bit High Speed CMOS Static RAM (Sony Corporation)
CXK581000AP 131072-word x 8-bit High Speed CMOS Static RAM (Sony Corporation)
CXK581000ATM 131072-word x 8-bit High Speed CMOS Static RAM (Sony Corporation)
CXK581000AYM 131072-word x 8-bit High Speed CMOS Static RAM (Sony Corporation)
CXK581000M 131072-word x 8-bit HIGH SPEED COMS STATIC RAM (Sony Corporation)
CXK581000P 131072-word x 8-bit HIGH SPEED COMS STATIC RAM (Sony Corporation)
CXK5814P 2048-WORD X 8 BIT HIGH SPEED CMOS STATIC RAM (Sony Corporation)
CXK5816M High Speed CMOS Static RAM (Sony)
CXK5816PN High Speed CMOS Static RAM (Sony)
