CXK77B3610GB

The CXK77B3610GB is High Speed Bi-CMOS Synchronous Static RAM designed by Sony.

Product Overview

Sony

Datasheet Details

Part number	CXK77B3610GB, CXK77B3610GB-
Manufacturer	Sony
File Size	199.29 KB
Description	High Speed Bi-CMOS Synchronous Static RAM
Datasheet	CXK77B3610GB-_SonyCorporation.pdf
Note	This datasheet PDF includes multiple part numbers: CXK77B3610GB, CXK77B3610GB-. Please refer to the document for exact specifications by model.
Additional preview pages of the CXK77B3610GB datasheet.

Product details

Description

The CXK77B3610GB-6/7 is a high speed 1M bit 119 pin BGA (Plastic) Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits.This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and

Features

the delayed write system to reduce the dead cycles. Features.
Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz.
Inputs and outputs are LVTTL/LVCMOS compatible.
Single 3.3V power supply: 3.3V ± 0.15V.
Byte-write possible.
OE asynchronization.
JTAG test circuit.
Package 119TBGA.
3 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru m.

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Published: Oct 18, 2017 |