BUY53D Datasheet, Lamp, SunLED Corporation

BUY53D Features

• Lamp T-1 3/4 PACKAGE . WITH BUILT-IN BLINKING IC. OPERATION VOLTAGE FROM 3.5V TO 14V. BLINKING FREQUENCY FROM 3.0Hz TO 1.5Hz. RoHS COMPLIANT. Notes: 1. All dimensions are in millimeters (in

PDF File Details

Part number:

BUY53D

Manufacturer:

SunLED Corporation

File Size:

201.74kb

Download:

📄 Datasheet

Description:

Blinking led lamp.

TAGS

BUY53D

SunLED Corporation

📁 Related Datasheet

BUY53A - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BUY53A DESCRIPTION ·Low Collector Saturation Voltage ·High Switching Speed ·High Current Current Capability ·Minimu.

BUY50 - Bipolar NPN Device (Seme LAB)
BUY50 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BUY50 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 250V(Min.) ·Excellent Safe Operating Area ·High Speed S.

BUY51A - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BUY51A DESCRIPTION ·Low Collector Saturation Voltage ·High Switching Speed ·High Current Current Capability ·Minimu.

BUY52A - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BUY52A DESCRIPTION ·High Current Capability ·Fast Switching Speed ·Low Saturation Voltage and High Gain ·Minimum Lo.

BUY54A - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BUY54A DESCRIPTION ·Low Collector Saturation Voltage ·High Switching Speed ·High Current Current Capability ·Minimu.

BUY55 - Bipolar NPN Device (Seme LAB)
BUY55 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN D.

BUY55 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BUY55 DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 125V(Min.) ·Low Collector Saturation Volt.

BUY56 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BUY56 DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Low Collector Saturation Volt.

BUY57 - Bipolar NPN Device (Seme LAB)
BUY57 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .