GSD2004W-V
Features
- Silicon Epitaxial Planar Diode
- Fast switching diode,especially suited for applications requiring high voltage capa- bility
- Lead (Pb)-free ponent
- ponent in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC
Mechanical Data
- Case: SOD123 plastic case
- Weight: approx. 9.3 mg
- Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box
SOD-123
Dim Min Max
0.55 Typ
B 1.40 1.70
C 3.55 3.85
H 2.55 2.85
0.00 0.10
K 1.00 1.35
0.25 0.40
M 0.10 0.15
α
8°
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter Continuous reverse voltage Peak repetitive reverse voltage Forward current (continuous) Peak repetitive forward current Non-repetitive peak forward current
Power dissipation Parameter
Reverse breakdown voltage Leakage current
Forward voltage
Diode capacitance Reverse recovery time
Test condition tp = 1 μs tp = 1...
