SGB100N025
Description
The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and gate charge. This device is ideal for power switching applications, high frequency circuits and uninterruptible power supplies.
Features
- VDS
100V
- ID (at Vgs=10V)
180A
- Extremely low on-resistance RDS(on)
- Extremely Qg×RDS(on) product(FOM)
- 100% avalanche tested
SGP100N025
SGW100N025
Absolute Maximum Ratings
Symbol
Parameter
VDS ID IDM VGS IAS EAS PD TJ, TSTG
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current
- Pulsed (Note 1)
Gate-Source voltage
Avalanche Current, single pulse (Note 5) Avalanche Energy, single pulse, L=1m H (Note 5) Power Dissipation
- TC = 25℃ (Note 2)
Operating and Storage Temperature Range
- Drain current limited by maximum...
