SGB100N042
Description
The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and gate charge. This device is ideal for power switching applications, high frequency circuits and uninterruptible power supplies.
Features
- VDS
100V
- ID (at Vgs=10V)
120A
- Typ. RDS(on) (at Vgs=10V)
3.7mΩ
- Low Gate Charge (typ. Qg = 71n C)
- 100% avalanche tested
SGP100N042
Absolute Maximum Ratings
Symbol
Parameter
IDM VGS IAS EAS PD TJ, TSTG
Drain-Source Voltage
Continuous Drain Current
- TC = 25℃
- TC = 100℃
Drain Current
- Pulsed (Note 1)
Gate-Source voltage
Avalanche Current, single pulse (Note 5) Avalanche Energy, single pulse, L=1m H (Note 5) Power Dissipation
- TC = 25℃ (Note 2)
Operating and Storage Temperature Range
- Drain current limited by maximum junction temperature.
Thermal...
