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VN0106

N-Channel Enhancement-Mode Vertical DMOS FET

VN0106 Features

* Free from secondary breakdown

* Low power drive requirement

* Ease of paralleling

* Low CISS and fast switching speeds

* Excellent thermal stability

* Integral source-drain diode

* High input impedance and high gain Applications

* Motor controls

* Converters

VN0106 General Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coef.

VN0106 Datasheet (343.91 KB)

Preview of VN0106 PDF

Datasheet Details

Part number:

VN0106

Manufacturer:

Supertex Inc

File Size:

343.91 KB

Description:

N-channel enhancement-mode vertical dmos fet.

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TAGS

VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Supertex Inc

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