* ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Super
VP1509
Supertex Inc
62.40 KB
P-channel enhancement-mode vertical dmos fets.
www.DataSheet4U.com VP1506 VP1509 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -60V -90V † MIL visual screening a.
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