* o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-qhannel devices Order Number I Package TO-220 To-92
R520
Supertex
131.07 KB
N-channel mosfet.
! i u p e r t e x ._n c . " IRF520 IRF521 IRF522 IRF523 R520 R521 N-Channel Enhancement-Mode Vertical DMOS Power FETs Preliminary Ordering Informa.
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