* o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhanc
R9522
Supertex
123.99 KB
P-channel enhancement-mode vertical dmos power fets.
o upertexinc. P-Channel Enhancement-Mode Vertical DMOS Power FETs IIRRF~95~2m2 R9523 Objective Ordering Information BVoss I ROS(ON) BVOGS (max.
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