* o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices ID(ON} (min) -O.25A -O.25A -O.25A Or
VP13A
Supertex
236.73 KB
P-channel enhancement-mode vertical dmos fets.
(J) upertexinc. VP13A P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -40V -60V -100V ROSION} (max) 2.
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