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TS08N03N3 Single N-Channel Power MOSFET

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Description

TS08N03N3 Single N-Channel Power MOSFET VDSS(V) 30 RDS (ON) 9mΩ(Typ)@VGS=10V 11mΩ(Typ)@VGS=4.5V ID(A) 30 Pin .
FEATURE:. The TS08N03N3 is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the sma.

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Datasheet Specifications

Part number
TS08N03N3
Manufacturer
Synmosaic
File Size
289.77 KB
Datasheet
TS08N03N3-Synmosaic.pdf
Description
Single N-Channel Power MOSFET

Applications

* APPLICATIONS:
* Load Switch PDFN3
* 3-8L Ordering and Marking Information Product ID Marking Package Packaging TS08N03N3 PDFN3
* 3-8L Tape&Reel Absolute Maximum Ratings Symbol VDSS VGSS ID TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS= -4

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