* - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz 0.90±0.1 Pin Configuration (TBN6301U) 1. Base 2. Emitter 3. Col
TBN6301
TACHYONICS
250.10 KB
Npn silicon rf transistor.
www.DataSheet4U.com
Preliminary Specification NPN SILICON RF TRANSISTOR
SOT323
TBN6301 series
Unit in mm
2.1±0.1 1.25±0.05
* Applications
.
📁 Related Datasheet
TBN4226 Si NPN Transistor (AUK)
TBN4227 Si NPN Transistor (AUK)
TB-7Z-020-EMC Hardware User Manual (TOKYO ELECTRON)
TB0213A IF SAW Filter Low Loss 70MHz (Golledge)
TB0213A Low Loss 70MHz IF SAW Filter (TAI-SAW Technology)
TB0490A IF SAW Filter (TAI-SAW TECHNOLOGY)
TB0492A IF SAW Filter (TAI-SAW TECHNOLOGY)
TB0496A IF SAW Filter (TAI-SAW TECHNOLOGY)
TB0497A IF SAW Filter (TAI-SAW TECHNOLOGY)
TB055 PS/2 to USB Mouse Translator (Microchip Technology)
