TBN6301 Datasheet - TACHYONICS

TBN6301 NPN SILICON RF TRANSISTOR

Base Emitter Collector 1 1.4 0.9 3 0.2 2 3 0.6 0~0.1 0.11 http://www.tachyonics.co.kr March. 2005. Page 6 of 6 Rev. 1.0 .

TBN6301 Features

* - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz 0.90±0.1 Pin Configuration (TBN6301U) 1. Base 2. Emitter 3. Col

TBN6301_TACHYONICS.pdf