TMF3201J Datasheet - TACHYONICS

TMF3201J Dual N-Channel Dual-Gate MOSFET

The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabil.

TMF3201J Features

* - Two AGC amplifiers in a single package - Integrated gate protection diodes - High AGC-range, high gain, low noise figure

* Applications - Professional communications equipment www.DataSheet4U.com 1. GATE 1(1) 4. DRAIN (2) 5. SOURCE 6. DRAIN (1) -Two gain controlled input stage for UHF

TMF3201J_TACHYONICS.pdf