TMF3201J Dual N-Channel Dual-Gate MOSFET

Description

Preliminary Specification Dual N-Channel Dual-Gate MOSFET * .
The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction.

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Datasheet Specifications

Part number: TMF3201J
Manufacturer: TACHYONICS
File Size: 237.00 KB
Datasheet: TMF3201J_TACHYONICS.pdf
Description: Dual N-Channel Dual-Gate MOSFET

Features

* - Two AGC amplifiers in a single package - Integrated gate protection diodes - High AGC-range, high gain, low noise figure

Applications

* - Professional communications equipment www. DataSheet4U. com 1. GATE 1(1) 4. DRAIN (2) 5. SOURCE 6. DRAIN (1) -Two gain controlled input stage for UHF and VHF tuners 2. GATE 2 3. GATE 1(2)
* Absolute Maximum Ratings (Ta = 25 ℃) Parameter Per MOSFET ; unless otherwise specified Drain-Sou

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TMF3201J Dual N-Channel Dual-Gate MOSFET TACHYONICS

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