2N2369 Datasheet (TAITRON) - High Speed Metal Can Transistor

2N2369, High Speed Metal Can Transistor

2N2369 2N2369A VCEO Collector-Emitter Voltage 15 VCES VCBO Collector-Emitter Voltage Collector-Base Voltage 40 40 VEBO IC Emitter-Base Voltage Collector Current Continuous 4.5 200 IC(peak) Collector Current Peak (10us pulse) Power Dissipation at TA=25°C 500 360 Power Dissipation Derat

2N2369 Features

* High Speed Switching Application

* Low Power

* RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-18, Metal can package Solderable per MIL-STD-202, Method 208 0.35 grams High Speed Metal Can Transistor (NPN) 2N2369/2N2369A TO-18 Maximum Ratings (T Ambient=25ºC