BZX384C3V9 Datasheet - TAITRON

BZX384C3V9 0.2W Surface Mount Zener Diodes

Value Unit Conditions *Ptot IFSM TJ Power Dissipation Peak Forward Surge Current,8.3ms single half sine-wave superimposed on rated load (JEDEC method) Operating Junction Temperature 200 2.0 150 mW Ta=25 °C (Note 1) A (Note 2) °C TSTG Storage Temperature Range -65 to 150 °C *Rth(j.

BZX384C3V9 Features

* Planar Die construction

* 200mW Power Dissipation

* Zener Voltage 3.9v to 75v

* Ideally Suited for Automated Assembly Processes

* RoHS Compliance Mechanical Data SOD-323F Case: SOD-323F, molded plastic Epoxy: Plastic package has UL flammability 94V-0 T

BZX384C3V9-TAITRON.pdf