TFF10N60 Datasheet (TAK CHEONG) - N-Channel Power MOSFET

TFF10N60, N-Channel Power MOSFET

The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is well suit

TFF10N60 Features

* Robust high voltage termination

* Avalanche energy specified

* Diode is characterized for use in bridge circuits

* Source to Drain diode recovery time comparable to a discrete fast recovery diode. ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol Parameter VDS