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TFF10N60

N-Channel Power MOSFET

TFF10N60 Features

* Robust high voltage termination

* Avalanche energy specified

* Diode is characterized for use in bridge circuits

* Source to Drain diode recovery time comparable to a discrete fast recovery diode. ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol Parameter VDS

TFF10N60 General Description

The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suit.

TFF10N60 Datasheet (2.77 MB)

Preview of TFF10N60 PDF

Datasheet Details

Part number:

TFF10N60

Manufacturer:

TAK CHEONG

File Size:

2.77 MB

Description:

N-channel power mosfet.

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TFF10N60 N-Channel Power MOSFET TAK CHEONG

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