BZT55C12 Datasheet - TEMIC Semiconductors

BZT55C12, Silicon Epitaxial Planar Z-Diodes

TELEFUNKEN Semiconductors BZT55C Silicon Epitaxial Planar Z *Diodes .

Applications

* Voltage stabilization 94 9373 Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z
* current Junction temperature Storage temperature range Test Conditions RthJAx300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175
* 65+175 Unit mW mA °C °C Maximum Thermal Resistance Tj =

BZT55C12_TEMICSemiconductors.pdf