P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) 100 rDS(on) (W) 0.210 ID (A) 17 TO-254AA S Hermetic Package 2N7079 G Case Isolated DSG Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for .