* D High-Side Switching D Secondary Breakdown Free:
* 255 V D Low On-Resistance: 8 W D Low-Power/Voltage Driven D Excellent Thermal Stability Benefits D Ease in Driving Switches D Full-Voltage Operation D Low Offset Voltage D Easily Driven Without Buffer D No High-Temperature “Run-Away” Appli
VP2410L
TEMIC
53.62 KB
P-channel enhancement-mode mosfet transistor.
VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) rDS(on) Max (W) 240 10 @ VGS = 4.5 V VGS(.
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