SS8550
FEATURES
Power dissipation PC : 1 W (Ta=25 ℃)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
-40 V
VCEO
Collector-Emitter Voltage
-25 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous -1.5 A
Tj Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
1. EMITTER 2. BASE 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100u A, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-0.1m A, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
Collector cut-off current
ICBO
VCB=-40V, IE=0
Emitter cut-off current
ICEO
VCE=-20V, IE=0
Emitter cut-off current
IEBO VEB=-5V, IC=0
DC current gain h FE(1) h...
