HX4N60 Datasheet, Mosfet, TIANJIN HUANXIN TECHNOLOGY

HX4N60 Features

• Mosfet z RDS(ON) =2.50Ω@VGS = 10 V z Low gate charge ( typical 16nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability
• Symbol

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Part number:

HX4N60

Manufacturer:

TIANJIN HUANXIN TECHNOLOGY

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494.03kb

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📄 Datasheet

Description:

N-channel mosfet. The HX4N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications

HX4N60 Application

• Applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
• Features z RDS(ON) =2.50Ω@VGS = 1

TAGS

HX4N60

TIANJIN HUANXIN TECHNOLOGY

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