Datasheet Details
Part number:
TXY8205
Manufacturer:
TMOS
File Size:
470.50 KB
Description:
Dual N-CHANNEL High Density Trench MOSFET
Features
* High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product) ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDSS Drain-Source Voltage ( VGS=0V ) VGSS Gate- source Voltage ID (a) Drain Current (continuous) at TC = 25 ℃ ID Drain Curre
