20J321 Datasheet - TOSHIBA

20J321, GT20J321

www.DataSheet4U.com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switc.

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20J321_TOSHIBA.pdf

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Datasheet Details

Part number:

20J321

Manufacturer:

Toshiba ↗

File Size:

531.04 KB

Description:

GT20J321

Features

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Applications

* Fast Switching Applications
* The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) Low switching loss
* : Eon = 0.40 mJ (typ. ) : Eoff = 0.43 mJ (typ. ) Low saturation voltage: VCE (sat) = 2.0 V (typ. ) FRD i

20J321 Distributors

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