Datasheet Details
Part number:
TW030N120C
Manufacturer:
File Size:
521.61 KB
Description:
Silicon carbide n-channel mosfet.
Datasheet Details
Part number:
TW030N120C
Manufacturer:
File Size:
521.61 KB
Description:
Silicon carbide n-channel mosfet.
TW030N120C, Silicon Carbide N-Channel MOSFET
TW030N120C Features
* (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ.) (3) High voltage: VDSS = 1200 V (4) Low drain-source on-resistance: RDS(ON) = 30 mΩ (typ.) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0
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