TC2896 Datasheet - TRANSCOM

TC2896 5 W Flange Ceramic Packaged GaAs Power FETs

The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range.

TC2896 Features

* 5 W Typical Power at 6 GHz

* 8 dB Typical Linear Power Gain at 6 GHz

* High Linearity: IP3 = 47 dBm Typical at 6 Ghz

* High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz

* Suitable for High Reliability Application

* Lg = 0.6 µm, Wg = 12 mm

TC2896 Datasheet (127.25 KB)

TC2896 Datasheet Preview — Preview of TC2896 PDF

Datasheet Details

Part number:

TC2896

Manufacturer:

TRANSCOM

File Size:

127.25 KB

Description:

5 w flange ceramic packaged gaas power fets.

📁 Related Datasheet

TC28C43 BiCMOS CURRENT MODE PWM CONTROLLERS (TelCom)

TC28C46 CMOS CURRENT MODE PWM CONTROLLER (TelCom)

TC28C46 CMOS CURRENT MODE PWM CONTROLLER (Teledyne)

TC28C47 CMOS CURRENT MODE PWM CONTROLLER (Teledyne)

TC2-1TX+ RF Transformer (Mini-Circuits)

TC2-72T+ RF Transformer (Mini-Circuits)

TC20 Small Induction Transistor (NEC)

TC20-11 50MM (2.0 INCH) 5 X 7 DOT MATRIX DISPLAYS (ETC)

TC20-x Peripheral (Microsonics)

TC200 EPITAXIAL PLANAR NPN TRANSISTOR (UTC)

TAGS

TC2896 Flange Ceramic Packaged GaAs Power FETs TRANSCOM

Image Gallery

TC2896 Distributor