TC2896 Datasheet - TRANSCOM

TC2896 5 W Flange Ceramic Packaged GaAs Power FETs

The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range.

TC2896 Features

* 5 W Typical Power at 6 GHz

* 8 dB Typical Linear Power Gain at 6 GHz

* High Linearity: IP3 = 47 dBm Typical at 6 Ghz

* High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz

* Suitable for High Reliability Application

* Lg = 0.6 µm, Wg = 12 mm

TC2896_TRANSCOM.pdf