TC2896 5 W Flange Ceramic Packaged GaAs Power FETs

Description

TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs .
The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

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Datasheet Specifications

Part number: TC2896
Manufacturer: TRANSCOM
File Size: 127.25 KB
Datasheet: TC2896_TRANSCOM.pdf
Description: 5 W Flange Ceramic Packaged GaAs Power FETs

Features

* 5 W Typical Power at 6 GHz
* 8 dB Typical Linear Power Gain at 6 GHz
* High Linearity: IP3 = 47 dBm Typical at 6 Ghz
* High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz

Applications

* include high dynamic range power amplifiers for commercial and military high performance power applications. ELECTRICAL SPECIFICATIONS Symbol P1dB GL IP3 PAE IDSS gm VP Rth CONDITIONS Output Power at 1dB Gain Compression Point, f = 6 GHz VDS = 8 V, IDS = 1200 mA Linear Power Gain, f = 6 GHz VDS = 8

TC2896 Distributors

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TC2896 Flange Ceramic Packaged GaAs Power FETs TRANSCOM

TRANSCOM TC2896-like datasheet