3EZ11
TRSYS
282.01kb
Glass passivated junction silicon zener diode.
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3EZ1 - ZENER DIODES
(GALAXY ELECTRICAL)
BL GALAXY ELECTRICAL
ZENER DIODES
3EZ1 --- 3EZ200
Vz RANGE: 1.0, 3.9 - 200V POWER DISSIPATION: 3.0 W
FEAT U R ES
For us e in s tabilizing and clippi.
3EZ10 - GLASS PASSIVATED JUNCTION ZENER DIODES
(Dc Components)
DC COMPONENTS CO., LTD.
R RECTIFIER SPECIALISTS
3EZ6.2 THRU 3EZ200
TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED JUNCTION ZENER DIODES
VOLTAGE RANGE.
3EZ10 - ZENER DIODES
(GALAXY ELECTRICAL)
BL GALAXY ELECTRICAL
ZENER DIODES
3EZ1 --- 3EZ200
Vz RANGE: 1.0, 3.9 - 200V POWER DISSIPATION: 3.0 W
FEAT U R ES
For us e in s tabilizing and clippi.
3EZ10 - SILICON ZENER DIODES
(PAN JIT)
3EZ6.8~3EZ51
SILICON ZENER DIODES
VOLTAGE 6.8 to 51 Volts
POWER
3.0 Watts
FEATURES
• Low profile package • Built-in strain relief • Low inductan.
3EZ100 - GLASS PASSIVATED JUNCTION ZENER DIODES
(Dc Components)
DC COMPONENTS CO., LTD.
R RECTIFIER SPECIALISTS
3EZ6.2 THRU 3EZ200
TECHNICAL SPECIFICATIONS OF GLASS PASSIVATED JUNCTION ZENER DIODES
VOLTAGE RANGE.
3EZ100 - 3W Glass Passivated Junction Silicon Zener Diode
(MCC)
MCC
Features
l Low Profile Package l Built-in Strain Relief l Glass Passivated Junction l Low Inductance l Excellent Clamping Capability
.
3EZ100 - ZENER DIODES
(GALAXY ELECTRICAL)
BL GALAXY ELECTRICAL
ZENER DIODES
3EZ1 --- 3EZ200
Vz RANGE: 1.0, 3.9 - 200V POWER DISSIPATION: 3.0 W
FEAT U R ES
For us e in s tabilizing and clippi.
3EZ100 - GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
(TRSYS)
3EZ11 THRU 3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts
FEATURES l l l l l l l l Low profile packa.
3EZ100D10 - SILICON ZENER DIODES
(EIC)
Certificate TH97/10561QM
Certificate TW00/17276EM
3EZ3.9D10 ~ 3EZ200D10
SILICON ZENER DIODES
VZ : 3.9 - 200 Volts PD : 3 Watts
DO - 41
FEATURES .
3EZ100D5 - 3W Zener Diodes
(Eris)
3EZxxxD5 SERIES
1.0 (25.4) MIN.
.034 (0.9) DIA.
.028 (0.7)
.300 (7.6) .230 (5.8)
1.0 (25.4) MIN.
.140 (3.6) .104 (2.6) D I A .
DO-15
Dimensions i.