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2N4912 SILICON EPITAXIAL NPN TRANSISTOR

2N4912 Description

SILICON EPITAXIAL NPN TRANSISTOR 2N4912 * Low Saturation Voltage Transistor In A Hermetic Metal Package * Designed For Driver Circuit.

2N4912 Applications

* Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector - Base Voltage 80V VCEO Collector - Emitter Voltage 80V VEBO Emitter
* Base Voltage 5V IC Continuous Collector Current 1.0A IB Base Current 1.0A PD Total Power Dis

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Datasheet Details

Part number
2N4912
Manufacturer
TT
File Size
83.26 KB
Datasheet
2N4912-TT.pdf
Description
SILICON EPITAXIAL NPN TRANSISTOR

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SILICON EPITAXIAL NPN TRANSISTOR TT
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