OP509B, OP508FA Datasheet - TT

OP509B NPN Silicon Phototransistor

The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point. Each device in the OP509 series consists of an NPN silicon pho.

OP509B Features

* Flat lensed for wide acceptance angle (OP508F)

* Lensed for high sensitivity (OP509)

* Easily stackable on 0.100” (2.54 mm) hole centers

* Inexpensive plastic package

* Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diode

OP508FA-TT.pdf