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OP509B

NPN Silicon Phototransistor

OP509B Features

* Flat lensed for wide acceptance angle (OP508F)

* Lensed for high sensitivity (OP509)

* Easily stackable on 0.100” (2.54 mm) hole centers

* Inexpensive plastic package

* Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diode

OP509B General Description

The OP508FA consists of an NPN silicon phototransistor mounted in a flat, black plastic “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optical axis to the half power point. Each device in the OP509 series consists of an NPN silicon pho.

OP509B Datasheet (747.99 KB)

Preview of OP509B PDF

Datasheet Details

Part number:

OP509B

Manufacturer:

TT

File Size:

747.99 KB

Description:

Npn silicon phototransistor.

📁 Related Datasheet

OP509A - NPN Silicon Phototransistor (TT)
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OP505W - NPN Phototransistors (TT)
OP505, OP505W, OP506, OP506W OP535, OP705 Features:  T-1 package style  Variety of sensitivity ranges  Choice of narrow or wide receiving angle  S.

TAGS

OP509B NPN Silicon Phototransistor TT

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