Datasheet Specifications
- Part number
- SML25SCM650N2B
- Manufacturer
- TT
- File Size
- 311.87 KB
- Datasheet
- SML25SCM650N2B-TT.pdf
- Description
- SILICON CARBIDE N-CHANNEL POWER MOSFET
Description
SILICON CARBIDE N-CHANNEL POWER MOSFET SML25SCM650N2B 650V SiC MOSFET In A Hermetic SMD1 (TO-276AB) Package Designed For High Temperature / Power Effi.
Applications
* ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain - Source Voltage VGS Gate - Source Voltage ID Continuous Drain Current (1) Tc = 25°C IDM Pulsed Drain Current (2) PD Total Power Dissipation at TJ = 25°C Derate Above 25°C TJ Maximum Junction Temperature Tstg StorSML25SCM650N2B Distributors
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