WNM2023 Datasheet - TY Semiconductor

WNM2023 N-Channel MOSFET

D The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2023 is Pb-free. 1 G 2.

WNM2023 Features

* z z z z z Trench Technology Supper high density cell design 1 3 W04

* 2 Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W04 = Device Code

* = Month (A~Z) Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC

WNM2023 Datasheet (228.13 KB)