WNM2023 - N-Channel MOSFET
D The WNM2023 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench (ON) 3 technology and design to provide excellent RDS with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM2023 is Pb-free.
1 G 2
WNM2023 Features
* z z z z z Trench Technology Supper high density cell design 1 3 W04
* 2 Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W04 = Device Code
* = Month (A~Z) Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC
