WNM2023 Datasheet - TY Semiconductor

N-Channel MOSFET

WNM2023 Features

* z z z z z Trench Technology Supper high density cell design 1 3 W04

* 2 Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W04 = Device Code

* = Month (A~Z) Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC

WNM2023 General Description

D The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2023 is Pb-free. 1 G 2.

WNM2023 Datasheet (228.13 KB)

WNM2023 Datasheet Preview — Preview of WNM2023 PDF

Datasheet Details

Part number:

WNM2023

Manufacturer:

TY Semiconductor

File Size:

228.13 KB

Description:

N-channel mosfet.
Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.038@ VGS=4.5V 0.044@ VGS=2.5V 0.052@ VGS=1.8V SOT-23.

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WNM2023 N-Channel MOSFET TY Semiconductor

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WNM2023 Features

WNM2023 General Description

Datasheet Details

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WNM2023 Distributor