WNM2025 Datasheet - TY Semiconductor

N-Channel MOSFET

WNM2025 Features

* z z z z z Trench Technology Supper high density cell design 1 3 W25

* 2 Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W25 = Device Code

* = Month (A~Z) Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC

WNM2025 General Description

The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2025 is Pb-free. 1 G 2 .

WNM2025 Datasheet (295.99 KB)

WNM2025 Datasheet Preview — Preview of WNM2025 PDF

Datasheet Details

Part number:

WNM2025

Manufacturer:

TY Semiconductor

File Size:

295.99 KB

Description:

N-channel mosfet.
Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-2.

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WNM2025 N-Channel MOSFET TY Semiconductor

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WNM2025 Features

WNM2025 General Description

Datasheet Details

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Description:

WNM2025 Distributor