WNM2027 Datasheet - TY Semiconductor

WNM2027, N-Channel MOSFET

Product specification WNM2027 N-Channel, 20V, 3.6A, Power MOSFET V(BR)DSS Rds(on) (Max.m) 45 @ 4.5V 55 @ 2.5V 66 @ 1.8V Id (A) 3.6 3.1 1.5 SOT-2.
The WNM2027 is N-Channel enhancement MOS Field Effect Transistor.

Features

* 3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6
* 2 = Device Code = Month (A~Z) Marking WT6

WNM2027-TYSemiconductor.pdf