WNM2027

N-Channel MOSFET

TY Semiconductor

WNM2027 Features

* 3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6

* 2 = Device Code = Month (A~Z) Marking WT6

* Applications z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converte

WNM2027 General Description

The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate 1 G 2 S charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2027 is Pb-free. Co.

WNM2027 Datasheet (126.57 KB)

WNM2027 Datasheet Preview — Preview of WNM2027 PDF

Datasheet Details

Part number:

WNM2027

Manufacturer:

TY Semiconductor

File Size:

126.57 KB

Description:

N-channel mosfet.
Product specification WNM2027 N-Channel, 20V, 3.6A, Power MOSFET V(BR)DSS Rds(on) (Max. m) 45 @ 4.5V 55 @ 2.5V 66 @ 1.8V Id (A) 3.6 3.1 1.5 SOT-2.

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WNM2027 N-Channel MOSFET TY Semiconductor

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WNM2027 Features

WNM2027 General Description

Datasheet Details

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