T14L1024N 128K X 8 HIGH SPEED CMOS STATIC RAM

Taiwan Memory Technology

Description

www.DataSheet4U.com tm TE CH T14L1024N SRAM .
The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits.

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Datasheet Specifications

Part number: T14L1024N
Manufacturer: Taiwan Memory Technology
File Size: 246.37 KB
Datasheet: T14L1024N_TaiwanMemoryTechnology.pdf
Description: 128K X 8 HIGH SPEED CMOS STATIC RAM

Features

* Fast Address Access Times : 10/12/15ns
* Single 3.3V ±0.3V power supply
* Center power/ground pin configuration
* Low Power Consumption : 110/105/100mA
* TTL I/O compatible
* 2.0V data retention mode
* Automatic power-down when deselected

Applications

* such as main memory storage and high speed communication buffers. Fabricated using high performance CMOS technology, access times down to 10ns are achieved. BLOCK DIAGRAM Vcc Vss A0 . . . . A16 CE DATA I/O WE OE DECODER PART NUMBER EXAMPLES T14L1024N-10J T14L1024N-10W T14L1024N-10P T14L1024N-10H T

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T14L1024N 128K HIGH SPEED CMOS STATIC RAM Taiwan Memory Technology

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