TSM3911D Overview
TSM3911D 20V Dual P-Channel MOSFET SOT-26 Pin Definition: Drain 2 Key Parameter Performance Parameter Value VDS VGS = -4.5V RDS(on) (max) VGS = -2.5V VGS = -1.8V -20 140 200 300 Qg 15.23 Unit V mΩ.
TSM3911D Key Features
- Advance Trench Process Technology
- High Density Cell Design for Ultra Low On-resistance