TSCDH30065G1 Description
TSCDH30065G1 Taiwan Semiconductor 30A, 650V SiC Merged PIN Schottky Diode.
TSCDH30065G1 Key Features
- Max junction temperature 175°C
- MPS structure for high ruggedness to forward current
- High-speed switching possible
- High forward surge capability
- High-frequency operation
- Positive temperature coefficient on VF
- RoHS pliant
- Halogen-free