TSCDH30065G1 Datasheet - Taiwan Semiconductor

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TSCDH30065G1 650V SiC Merged PIN Schottky Diode

TSCDH30065G1 Taiwan Semiconductor 30A, 650V SiC Merged PIN Schottky Diode .
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TSCDH30065G1-TaiwanSemiconductor.pdf

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Datasheet Details

Part number:

TSCDH30065G1

Manufacturer:

Taiwan Semiconductor

File Size:

387.95 KB

Description:

650V SiC Merged PIN Schottky Diode

Features

* Max junction temperature 175°C
* MPS structure for high ruggedness to forward current surge events
* High-speed switching possible
* High forward surge capability
* High-frequency operation
* Positive temperature coefficient on VF
* RoHS compliant
* Halogen-free KE

Applications

* General purpose
* Switch mode power supplies
* Power factor correction MECHANICAL DATA
* Case: TO-247-3L
* Molding compound meets UL 94V-0 flammability rating
* Terminal: Matte tin plated leads, solderable per J-STD-002
* Polarity: As circuit diagram
* Weight: 6.28

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