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TSCDH30065G1 - 650V SiC Merged PIN Schottky Diode

Taiwan Semiconductor

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Datasheet Details

Part number	TSCDH30065G1
Manufacturer	Taiwan Semiconductor
File Size	387.95 KB
Description	650V SiC Merged PIN Schottky Diode
Datasheet	TSCDH30065G1-TaiwanSemiconductor.pdf

TSCDH30065G1 Product details

Description

only.

Features

Max junction temperature 175°C.
MPS structure for high ruggedness to forward current surge events.
High-speed switching possible.
High forward surge capability.
High-frequency operation.
Positive temperature coefficient on VF.
RoHS compliant.
Halogen-free KEY.

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Published: Jun 18, 2024 |