TSH253 Datasheet PDF (High Sensitivity Omni-Polar Hall Effect Switch)

TSH253 - High Sensitivity Omni-Polar Hall Effect Switch

Description

TSH253 Hall-effect sensor is a temperature stable, stress-resistant switch.

Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization.

Features

CMOS Hall IC Technology.
Solid-State Reliability much better than reed switch.
Omni polar output switches with absolute value of North or South pole from magnet.
High Sensitivity for reed switch replacement.
Operation down to 1.8 V and Max at 6V.
ESD HBM ±4kV Min.
RoHS Compliant.
Halogen-free according to IEC 61249-2-21.

Datasheet Details

Part number	TSH253
Manufacturer	Taiwan Semiconductor
File Size	570.28 KB
Description	High Sensitivity Omni-Polar Hall Effect Switch
Datasheet	TSH253 Datasheet
Additional preview pages of the TSH253 datasheet.

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Full PDF Text Transcription

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TSH253 Taiwan Semiconductor High Sensitivity Omni-Polar Hall Effect Switch DESCRIPTION TSH253 Hall-effect sensor is a temperature stable, stress-resistant switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. TSH253 includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries.

Published: Jun 17, 2024 |